| PART |
Description |
Maker |
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS62WV5128ALL-70BI IS62WV5128BLL-55BI IS62WV5128BL |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
|
| IS65WV25616BLL-70TA2 IS65WV25616BLL-55TLA1 IS65WV2 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc.
|
| IS62WV5128ALL-70TI IS62WV5128BLL IS62WV5128BLL-55T |
512K X 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS62VV25616LL-85M IS62VV25616LL-85MI IS62VV25616LL |
256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS65WV25616DBLL-55CTLA3 IS62WV25616DALL-55TI IS62W |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS62WV6416BLL IS62WV6416BLL-45B IS62WV6416BLL-45BI |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| AND8139D NL17SV16XV5T2 AND8139 NL17SV00XV5T2 NL17S |
2-Input OR Gate, Ultra-Low Voltage
Non Inverting Buffer, Ultra Low Voltage
Single 2-Input NOR Gate, Ultra-Low Voltage
Single 2-Input NAND Gate, Ultra-Low Voltage
ULTRA-LOW VOLTAGE MINIGATE DEVICES SOLVE 1.2 V INTERFACE PROBLEMS
|
ONSEMI[ON Semiconductor]
|
| BS616UV4010EI BS616UV4010 BS616UV4010BC BS616UV401 |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV1010EI BS616UV1010 BS616UV1010AC BS616UV101 |
Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
| BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
